STMicroelectronics Introduces 250A Power MOSFET Combining Package and Process Advances for Higher Motor-Drive Efficiency

  First discrete power MOSFET to combine ribbon bonding with surface-mount

    power package delivers 1.5 milliohm on-resistance with high current

                       handling for 55V applications



    GENEVA, July 16 /EMWNews/ -- Taking aim at reduced

operating costs and lowering the environmental footprint in applications

such as electric vehicles, STMicroelectronics (NYSE: STM), a world leader

in power applications, has introduced a 250A surface-mount power MOSFET

with the lowest on-resistance in the market, to minimize energy conversion

losses and enable higher performance.



    The new device, the STV250N55F3, is the first power MOSFET to combine

ST's PowerSO-10(TM) package with ribbon bonding to achieve ultra-low

die-free package resistance. Implemented in ST's high-density STripFET

III(TM) fabrication process, the device offers a typical on-resistance of

1.5 milliohms. Further benefits of STripFET III include low switching

losses and rugged avalanche characteristics. The nine-lead source

connection also reduces on-resistance, in addition to aiding heat

dissipation. Overall, the package is rated for 300W dissipation at 25

degrees C.



    The high current rating allows engineers to design-out multiple

parallel MOSFETs to save board space and BOM costs. Standard driving

thresholds also simplify driver-circuit design. The STV250N55F3 is rated

for applications up to 55V.



    The ability to operate at temperatures up to 175 degrees C makes the

STV250N55F3 suitable for use in high-current electric-traction applications

such as forklift trucks, golf carts and pallet trucks, as well as

lawnmowers, wheelchairs, and electric bikes. Reliability and robustness are

assured through 100% avalanche testing both at wafer level as well as on

finished products. In the future, the device will be eligible for

automotive-grade applications.



    Within the same family, ST also has the 55V STV200N55F3, which

implements a four-lead source connection and is rated for 200A continuous

drain current.



    Samples of the STV250N55F3 are available immediately. Volume production

is scheduled for Q3 2008 at $2.50 for 10,000 pieces.

    About STMicroelectronics



    STMicroelectronics is a global leader in developing and delivering

semiconductor solutions across the spectrum of microelectronics

applications. An unrivalled combination of silicon and system expertise,

manufacturing strength, Intellectual Property (IP) portfolio and strategic

partners positions the Company at the forefront of System-on-Chip (SoC)

technology and its products play a key role in enabling today's convergence

markets. The Company's shares are traded on the New York Stock Exchange, on

Euronext Paris and on the Milan Stock Exchange. In 2007, the Company's net

revenues were $10 billion. Further information on ST can be found at

http://www.st.com.